dm ph6023sk3 document number: ds37846 rev. 1 - 2 1 of 7 www.diodes.com september 2015 ? diodes incorporated dm ph6023sk3 advanced information 60v 175c p - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t c = + 25c - 60v 33 m ? @ v gs = - 10 v - 35a 40 m ? @ v gs = - 4.5 v - 32a description this mosfet has been designed to meet the stringent requirements of automotive applications. applications it is qualified to aecq101, s upported by a ppap and is ideal for use in : ? engine management systems ? body control electronics ? dcdc converters features ? rated to + 175 c C ideal f or high ambient temperature environments ? 1 00% unclamped inductive switching C ensures more reliable a nd robust end application ? low on - resistance ? low input capacitance ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: to 252 (dpak) ? case material: molded plastic, green molding compound. ? ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? w eight: 0. 33 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm p h 60 2 3s k3 - 13 to252 (dpak) 2 , 5 00 /tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.di odes.com/products/packages.html marking information equivalent circuit pin out top view =manufacturer s marking p6023s = product type marking code yyww = date code marking yy = last digit of year (ex: 1 5 = 201 5 ) ww = week code (01 to 53) top view yyww p6023s to252 (dpak) green d s g
dm ph6023sk3 document number: ds37846 rev. 1 - 2 2 of 7 www.diodes.com september 2015 ? diodes incorporated dm ph6023sk3 advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 60 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = - 10 v steady state t c = + 25c t c = + 10 0c i d - 35 - 27 a steady state t a = + 25c t a = + 70c i d - 7.3 - 6.1 a pulsed drain curren t ( 380 s pulse, duty cycle = 1% ) i dm - 60 a maximum continuous body diode f orward current (note 6 ) i s - 2.2 a avalanche current (note 7 ) l = 0.1mh i as - 3 5 a avalanche energy (note 7 ) l = 0.1mh e as 6 0 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) p d 2.0 w thermal resistance, junction to ambient (note 5 ) s teady s tate r ja 80 c/w total power dissipation (note 6 ) p d 3. 2 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 41 c/w thermal resistance, junction to case r j c 1. 6 operating and storage temperature range t j, t stg - 55 to +1 7 5 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 6 0 v v gs = 0v, i d = - 250a zero gate voltage drain current t j = +25c i dss - 1 a v ds = - 60 v, v gs = 0v gate - source leakage i gss 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 1.0 - 3.0 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) 33 m v gs = - 10 v, i d = - 10 a 40 v gs = - 4 .5 v, i d = - 8 a diode forward voltage v sd - 0.7 - 1.2 v v gs = 0v, i s = - 1 a dynamic characteristics (note 9 ) input capacitance c iss 2 , 569 pf v ds = - 3 0 v, v gs = 0v , f = 1.0mhz output capacitance c oss 179 pf reverse transfer capacitance c rss 143 pf gate resistance r g 5 v ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5 v ) q g 26.5 nc v ds = - 30 v, i d = - 5 a total gate charge ( v gs = - 10 v ) q g 53.1 nc gate - source charge q gs 7.1 nc gate - drain charge q gd 12.6 nc turn - on delay time t d(on) 6 n s v gs = - 10 v , v ds = - 30 v , r g = 3 , i d = - 5 a turn - on rise time t r 7.1 n s turn - off delay time t d(off) 110 n s turn - off fall time t f 62 n s body diode reverse recovery time t rr ? 20 ? n s i f = - 5 a, di/dt = 1 0 0a/s body diode reverse recovery charge q rr ? 14 ? n c notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout , see http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate. 7 . i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25c 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm ph6023sk3 document number: ds37846 rev. 1 - 2 3 of 7 www.diodes.com september 2015 ? diodes incorporated dm ph6023sk3 advanced information 0 10 20 30 40 50 0 .5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 10v gs v = 5v gs v = 4.5v gs v = 4v gs v = 3.5v gs v = 3v gs v = 2.5v gs i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic 0 5 10 15 20 25 30 1 2 3 4 5 t = 175c a t = 150c a t = 85c a t = 125c a t = 25c a t = -55c a i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics v = 5v ds .01 .015 .02 .025 .03 .035 .04 .045 .05 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 .01 .02 .03 .04 .05 .06 .07 .08 .09 .1 0 4 8 12 16 20 i = 8a d i = 10a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 0 .01 .02 .03 .04 .05 .06 .07 1 6 11 16 21 26 31 v = 10v gs t = 175c a t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature 0 .5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 175 v = 10v gs i = 10a d r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature
dm ph6023sk3 document number: ds37846 rev. 1 - 2 4 of 7 www.diodes.com september 2015 ? diodes incorporated dm ph6023sk3 advanced information 0 .02 .04 .06 .08 -50 -25 0 25 50 75 100 125 150 175 v = 10v gs i = 10a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175 i = 250a d i = 1ma d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature 0 5 10 15 20 25 30 0 .3 .6 .9 1.2 1.5 t = 175c a t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current .1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 45 50 55 60 t = 175c a t = 150c a t = 25c a t = 85c a t = 125c a i , d r a i n l e a k a g e c u r r e n t ( n a ) d s s v , drain-source voltage (v) ds figure 10 typical drain-source leakage current vs. voltage 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 55 v = -30v ds i = -5a d v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge 100 1000 10000 0 5 10 15 20 25 30 35 40 c iss c oss c rss c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 12 typical junction capacitance f = 1mhz
dm ph6023sk3 document number: ds37846 rev. 1 - 2 5 of 7 www.diodes.com september 2015 ? diodes incorporated dm ph6023sk3 advanced information .1 1 10 100 1 10 100 p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w p = 1s w r ds(on) limited t = 175c j(max) t = 25c c v = 10v gs single pulse dut on infinite heatsink i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 13 soa, safe operation area .001 .01 .1 1 .000001 .00001 .0001 .001 .01 .1 1 10 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r ? ? jc jc r = 1.6c/w ? jc duty cycle, d = t1/ t2 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 14 transient thermal resistance
dm ph6023sk3 document number: ds37846 rev. 1 - 2 6 of 7 www.diodes.com september 2015 ? diodes incorporated dm ph6023sk3 advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. to252 (dpak) to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 e e 6.45 6.70 6.58 e1 4.32 h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. to252 (dpak) dimensions value (in mm) c 4.572 x 1.060 x1 5.632 y 2.600 y1 5.700 y2 10.700 b3 e l3 d l4 b2(2x) b(3x) e c a 71 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dm ph6023sk3 document number: ds37846 rev. 1 - 2 7 of 7 www.diodes.com september 2015 ? diodes incorporated dm ph6023sk3 advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products a re specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices o r systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
|
